050-7051 rev e 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2ll lll apt6010b2ll apt6010lll 600v 54a 0.100 ? ? ? ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. power mos 7 r mosfet characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 27a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 0.100 100 500 100 35 apt6010b2ll_lll 600 54 216 30 40 690 5.52 -55 to 150 300 54 50 3000
dynamic characteristics apt6010b2ll_lll 050-7051 rev e 9-2004 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.20 0.16 0.12 0.08 0.04 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 54a ) reverse recovery time (i s = - 54a , dl s /dt = 100a/s) reverse recovery charge (i s = - 54a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 54 216 1.3 790 18 8 symbol r jc r ja min typ max 0.18 40 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 54a @ 25c resistive switching v gs = 15v v dd = 300v i d = 54a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 54a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d = 54a, r g = 5 ? min typ max 6710 1250 90 150 30 75 12 19 34 9 885 970 1150 1220 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 2.06mh, r g = 25 ? , peak i l = 54a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 54a di / dt 700a/s v r 600v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein.
v gs =15 &10v 8v 6v 5.5v 6.5v 7v 7.5v 050-7051 rev e 9-2004 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 140 120 100 80 60 40 20 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 typical performance curves t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 160 140 120 100 80 60 40 20 0 60 50 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 v gs =10v v gs =20v apt6010b2ll_lll v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model f igure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 27a i d = 27a v gs = 10v 0.0271 0.0656 0.859 0.009f 0.0202f 0.293f power (watts) junction temp. ( c) rc model case temperature. ( c)
apt6010b2ll_lll 050-7051 rev e 9-2004 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 20,000 10,000 1,000 100 10 200 100 10 1 1 10 100 600 0 10 20 30 40 50 0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 c rss c oss c iss t j =+150c t j =+25c 220 100 10 1 16 12 8 4 0 t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s v ds =300v v ds =120v v ds =480v i d = 54a i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 400v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f e on and e off ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 35 40 45 50 v dd = 400v r g = 5 ? t j = 125c l = 100h v dd = 400v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery v dd = 400v i d = 54a t j = 125c l = 100h e on includes diode reverse recovery 140 120 100 80 60 40 20 0 5000 4000 3000 2000 1000 0 120 100 80 60 40 20 0 2500 2000 1500 1000 500 0
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% t f 90% i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt30df60 050-7051 rev e 9-2004 apt6010b2ll_lll
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